AES Semigas


16 June 2022

GaN Systems launches 650V, 18A, 78mΩ transistor for consumer, industrial and data-center applications

GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) has expanded its portfolio of high-performance, low-cost gallium nitride (GaN) power transistors by launching the GS-065-018-2-L, which features lower on-resistance, increased robustness and thermal performance, and an 850V VDS (transient) rating.

The GS-065-018-2-L is a 650V, 18A, 78mΩ bottom-side-cooled transistor suitable for smaller and lighter consumer adapters for laptops and gaming consoles and higher power density and efficiency in televisions and server SMPS (switched-mode power supplies). Lower on-resistance (RDS(on)) means lower power loss and higher power rating, resulting in higher efficiency and power density. The 78mΩ transistor joins the 150mΩ GS-065-011-2-L and 50mΩ GS-065-030-2-L. The new product targets 100–800W adapters, consumer and industrial power supplies, LED drivers, bridgeless totem-pole PFC (power factor correction) circuits and motor drives.

The firm says that the new addition empowers designers to further improve efficiency, thermal management, and power density performance while increasing design flexibility and cost-effectiveness to meet new demands from consumer, industrial and data-center customers. The transistor’s industry-standard 8mm × 8mm PDFN form factor eases customer adoption, scalability and commercialization.

“Our continuous design advancements are making GaN power semiconductors the transistor of choice in power electronics,” says CEO Jim Witham.

See related items:

GaN Systems adds 8mm x 8mm PDFN-packaged 650V GaN power transistors

Tags: GaN Systems


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