AES Semigas


24 June 2022

WIN releases 0.12µm-gate RF GaN-on-SiC technology

WIN Semiconductors Corp of Taoyuan City, Taiwan – the world’s largest pure-play compound semiconductor wafer foundry – has expanded its portfolio of RF GaN technologies with the release of a new gallium nitride (GaN) on silicon carbide (SiC) 0.12μm-gate technology. The NP12-01 millimeter-wave (mmWave) technology provides increased gain and improved transistor stability factor. The NP12-01 technology is suitable for the high-power amplifiers used in 5G mmWave radio access networks, satellite communications, and radar systems.

Supporting full monolithic microwave integrated circuits (MMICs), the NP12-01 platform allows customers to develop compact linear or saturated power amplifiers up to 50GHz. This process is qualified for 28V operation and, in the 29GHz band, generates saturated output power over 4W/mm with 13.5dB linear gain and nearly 50% efficiency. When optimized for power-added efficiency (PAE), NP12-01 provides over 3.5W/mm output power and greater than 50% PAE at 29GHz.

WIN says that higher gain and power-added efficiency provided by the NP15-01 platform affords designers a larger trade-space to optimize amplifier performance and chip size to meet increasingly difficult specifications of current-generation communication platforms and radar systems. Depending on the function, these high-performance applications require precise optimization of output power, linearity, gain and efficiency, and a broad trade-space is crucial to balance amplifier performance and product cost.

WIN showcased its compound semiconductor RF and mm-Wave solutions at the 2022 IEEE International Microwave Symposium (IMS) in Denver, CO, USA (21-23 June).

See related items:

WIN releases 0.15μm GaN process for high-power mmWave PA applications and 5G infrastructure

Tags: WIN Semiconductors