AES Semigas


7 March 2022

EPC showcasing GaN for multiple applications at APEC

At the IEEE Applied Power Electronics Conference and Exposition (APEC 2022) in Houston, Texas (20-24 March), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA is delivering multiple technical presentations, as well as a professional seminar on GaN technology and applications. In addition, in booth #1307 the firm is demonstrating its latest enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits in a large variety of customer end-products.

48V DC-DC for high-density computing and automotive

The high-density computing and automotive markets are coalescing on the 48V bus, and GaN is the ideal solution at this voltage node, says EPC. The firm is demonstrating an LLC design with power density of 5000W/in3 for the high-density computing needs of power-hungry applications such as artificial intelligence (AI) and crypto mining.

For the automotive market, in-booth demonstrations are showing how GaN enables 2kW bidirectional converters that increase efficiency, shrink the size, and reduce system costs for the next generation of mild hybrid and electric vehicles.


GaN-based motor drives allow various applications such as warehouse autonomous robots, eMobility and drones to reduce size and weight, extend range, and increase reliability. In booth 1302, EPC will have examples of GaN-based motors capable of driving everything from eScooters to server fans and vacuum cleaners.

Fast charging

GaN-based USB-C PD 3.1 fast chargers can be up to 40% smaller and charge 2.5x faster than traditional silicon-based chargers. EPC is showing how GaN enables miniaturization, very high efficiency and excellent thermal performance for this high-volume application.

GaN integration

EPC’s GaN experts will be available to discuss the latest progress and roadmaps for GaN integration. Visitors to the booth can take the opportunity to work live with the web-based design tools available in the GaN Power Bench to accelerate their design cycles.

Attendees interested in meeting with EPC applications experts during the event can schedule sessions in EPC’s booth or meet in the customer suite for a private meeting. Meeting requests can be submitted at

Technical presentations featuring eGaN FETs and ICs

21 March
(8:30am–12pm) ‘The Surprising Benefits GaN Brings to BLDC Motor Drives – Design, Performance, Cooling, and Reliability’, Seminar instructors: Michael de Rooij Ph.D. and Marco Palma.

23 March
(8:30–8:55am) ‘Extending GaN Integration to Higher Power and Faster Speeds: An Examination of the Progress and Roadmaps for GaN Integration’ by Alex Lidow Ph.D.
(2:55–3:20pm) ‘2 kW Bi-Directional Automotive 48 V-12 V DC-DC Converters Using eGaN FETs’ by Yuanzhe Zhang Ph.D.
(5:10–5:30pm) ‘PCB Layout for Chip-Scale Package GaN FETs Optimizes Both Electrical and Thermal Performance’ by John Glaser Ph.D.

24 March
(11–11:25am) ‘Thermal Tool for Quick Estimation of Thermal Performance of eGaN FETs’ by Assaad Helou Ph.D.
(3–3:25pm) ‘Recent Advancements in the Understanding of Dynamic On-Resistance and Electromigration in Enhancement Mode GaN Devices’ by Robert Strittmatter Ph.D.

Tags: EPC E-mode GaN FETs


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