AES Semigas


15 March 2022

GaN Systems powers Samsung Galaxy S22+ and Ultra fast charger

GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) says that its high-efficiency semiconductor products have been selected to power the flagship Samsung Galaxy S22+ and Ultra smartphones, enabling the slim and powerful 45W charger to deliver on the efficiency and fast-charging promise of GaN. The 45W charger is claimed to set a new benchmark in power density and efficiency. The latest-generation charger nearly doubles the power of the previous generation while enabling super-fast charging. 

GaN is reckoned to allow switching 20x faster than legacy silicon devices and 10x faster than silicon carbide (SiC). The inherent efficiency advantage of GaN is said to enable unrivaled form factors and power density for customers across consumer, enterprise, industrial and automotive markets. A common theme across all power markets is that customers want lower-cost systems that are smaller, lighter and consume much less power than legacy platforms. GaN System says that its reliability, quality and product lifetime enables it to be a supplier to technology companies like Samsung.

“Samsung's choice of our leading discrete solution for its flagship smartphone reinforces just how inextricably linked high-end consumer devices are with the cool efficiency and power of GaN,” claims GaN Systems’ CEO Jim Witham. “Samsung continues the trend of leading companies designing top-of-the-line consumer products around our unrivaled discrete offerings,” he adds.

Tags: GaN Systems


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