21 March 2022
Infineon launches optimized 650V CoolSiC MOSFETs
Infineon Technologies AG of Munich, Germany has launched a new family of CoolSiC 650V silicon carbide (SiC) MOSFETs to deliver reliable, easy-to-use and cost-effective top performance. Building on Infineon’s SiC trench technology and come in a compact D2PAK SMD 7-pin package with .XT interconnection technology, the devices target high-power applications including servers, telecom, industrial switch-mode power supplies (SMPS), fast electric vehicle (EV) charging, motor drives, solar energy systems, energy storage, and battery formation.
Picture: The CoolSiC MOSFETs 650V in D²PAK with .XT interconnection technology.
The new products offer improved switching behavior at higher currents and 80% lower reverse recovery charge (Qrr) and drain-source charge (Qoss) than the best silicon reference, it is claimed. The reduced switching losses allow high-frequency operations in smaller system sizes, enabling higher efficiency and power density. The trench technology is the basis for superior gate oxide reliability. Together with an improved avalanche and short-circuit robustness, this ensures the highest system reliability even in harsh environments. The SiC MOSFETs are suitable for topologies with repetitive hard commutation as well as for high-temperature and harsh operations. Due to a very low on-resistance (RDS(on)) dependency with temperature, they show an excellent thermal behaviour, says Infineon.
Featuring a wide voltage range from gate to source (VGS) from -5V up to 23V and supporting 0V turn-off VGS and a gate-source threshold voltage (VGS(th)) greater than 4V, the new family of ten new products also works with standard MOSFET gate driver ICs. Additionally, the new products support bi-directional topologies and full dv/dt controllability, offering reduced system cost and complexity, as well as ease of adoption and integration. The .XT interconnection technology significantly improves the package’s thermal capabilities. Up to 30% extra loss can be dissipated compared with a standard interconnection.