AES Semigas


24 March 2022

ROHM starts production of 150V GaN HEMTs with 8V gate-source voltage

Power semiconductor maker ROHM says that its new GNE10xxTB series of 150V gallium nitride (GaN) high-electron-mobility transistors (HEMTs) increases the gate withstand voltage (rated gate-source voltage) to what is claimed to be an industry-leading 8V ā€“ ideally to be applied in power supply circuits for industrial equipment such as base stations and data centers along with Internet of Things (IoT) communication devices.

In recent years ā€“ due to the rising demand for server systems in response to the growing number of IoT devices ā€“ improving power conversion efficiency and reducing size have become important issues requiring further advances in the power device sector, notes ROHM. As GaN devices generally provide higher switching characteristics and lower ON-resistance than silicon devices, they are expected to contribute to lower power consumption of various power supplies and greater miniaturization of peripheral components.

Along with mass-producing silicon carbide (SiC) devices and feature-rich silicon devices, ROHM says that it has developed GaN devices that achieve superior high-frequency operation in the medium-voltage range, allowing it to provide power solutions for a wider variety of applications.

These new products utilize an original structure that raises the rated gate-source voltage from the conventional 6V to 8V. As a result, degradation is prevented, even if overshoot voltages exceeding 6V occur during switching - contributing to improved design margin and higher reliability in power supply circuits. The GNE10xxTB series is offered in a highly versatile DFN5060 (5.0mm x 6.0mm x 1.0mm) package featuring what is claimed to be superior heat dissipation and large current capability, facilitating handling during the mounting process.

Under the name EcoGaN, ROHM has trademarked GaN devices that contribute to greater energy conservation and miniaturization by maximizing the low ON-resistance and high-speed switching characteristics of GaN, with the goal of reducing application power consumption, miniaturizing peripheral components, and reducing design load along with the number of parts required. Starting with the GNE1040TB with a drain-source ON-resistance of 40mĪ©, the firm is working to expand the EcoGaN lineup with devices that improve performance.

Application examples are cited as: 48V input buck converter circuits for data centers and base stations; boost converter circuits for the power amplifier block of base stations; Class D audio amplifiers; and light detection & ranging (LiDAR) drive circuits and wireless charging circuits for portable devices.

Going forward, ROHM will continue to develop control ICs that leverage analog power supply technology such as Nano Pulse Control and modules that incorporate these ICs, along with power solutions that contribute to a sustainability by maximizing the performance of GaN devices.

Japan’s Ministry of Economy, Trade and Industry (METI) has set a target of 30% energy savings for new data centers by 2030. However, system performance must not only be energy efficient but also robust and stable, as data centers have become a vital part of social infrastructure, says ROHM.

In response, ROHM’s new GaN device with a gate withstand voltage of 8V provides a high degree of robustness and stability while achieving what is claimed to be superior energy savings. The firm says that, beginning with these products, it will continue to improve power supply efficiency in power sources by combining with proprietary Nano Pulse Control analog power supply technology, creating a major technical trend that will help the semiconductor and telecoms industries become carbon neutral by 2040.

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ROHM’s develops 150V GaN HEMT with 8V gate breakdown voltage

Tags: GaN HEMT Rohm