AES Semigas


10 March 2022

Transphorm exhibiting and presenting at APEC 2022

In booth 825 at the 37th annual IEEE Applied Power Electronics Conference and Exposition (APEC 2022) in Houston, Texas (20-24 March), Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion — is hosting in-production products from customers representing a broad range of markets. Also, its engineering experts are presenting several technological innovations driving both the usability and adoption of GaN industry-wide.

Transphorm’s complete product portfolio currently includes 650V and 900V devices in JEDEC- and AEC-Q101-qualified forms and various packages. The firm reckons that its portfolio’s technical advantages are driven largely by its vertical integration. Uncommonly for the GaN semiconductor industry, this operating model allows Transphorm to control its devices’ design, epitaxial wafer and manufacturing processes.

As a result, the firm claims that it supports the largest range of power conversion requirements (45W to 10+kW) across the widest range of power applications: power adapters, data-center and gaming power-supply units (PSUs), crypto mining rigs, electric vehicle (EV) converters, inverters for renewable energy, broad industrial systems, aerospace & defense systems, and others. Examples of these cross-industry products are on-site during the show.

Additionally, Transphorm partners with leading technology companies offering complementary capabilities to fast-track development of GaN power systems. The firm says that these partnerships remove barriers to adoption, simplifying the design-in of its GaN FETs. Several of these development tools are also on display.

During the APEC conference, Transphorm staff are giving the following presentations:

  • ‘Short-Circuit Protection for GaN Power Devices with Integrated Current Limiter and Commercial Gate Driver’ by Davide Bisi, member of Technical Staff, Office of the CTO, Technical Session (T04.2) on 22 March (8:30am);
  • ‘GaN Four Quadrant Switches: Ready for Prime Time?’ by technical fellow and principal scientist Rakesh Lal, Industry Session (IS02.3) on 22 March (9:20am);

‘No Two Wide Bandgap Technologies are the Same: Switching Advantages of SuperGaN FETs’ by senior VP of technical marketing and business development Philip Zuk, Industry Session (IS11.7) on 23 March (5:20pm).

Tags: Transphorm GaN-on-Si GaN HEMT



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