AES Semigas


3 May 2022

EPC launches 25mΩ 200V rad-hard transistor for space applications

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has launched the EPC7007, a 200V, 25mΩ, 80APulsed radiation-hardened enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistor (FET) in a small 5.76mm2 footprint. The EPC7007 has a total dose rating greater than 1Mrad and SEE (single event effect) immunity for LET (linear energy transfer) of 85MeV/(mg/cm2). The devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family. Packaged versions will be available from EPC Space LLC of Haverhill, MA, USA.

Compared with rad-hard silicon devices with similar RDSon, the EPC7007 offers 40 times smaller QG and QGD, zero reverse recovery (QRR), and the size is 40 times smaller. With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and very low on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies, resulting in higher power densities, higher efficiencies, and more compact and lighter-weight circuitry for critical spaceborne missions. GaN devices also support higher total radiation levels and SEE LET levels than silicon solutions.

Applications benefiting from the performance and fast deployment of the EPC7007 include DC-DC power, motor drives, light detection and ranging (LiDAR), deep probes, and ion thrusters for space applications, satellites and avionics.

“EPC’s GaN technology enables a new generation of power conversion and motor drives in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before,” says CEO & co-founder Alex Lidow. “The EPC7007 offers designers a solution with a figure of merit that is 50 times better than best-in-class silicon rad-hard devices,” he adds. “The EPC7007 extends the voltage range of our rad-hard family to 200V and provides designers with a solution that is significantly smaller and lower cost than silicon.”

The EPC7007 is available for engineering sampling and will be fully qualified for volume shipments in December.

See related items:

EPC releases lowest on-resistance rad-hard transistor available for demanding space applications

EPC Space launches cost-effective 60V rad-hard GaN power device

Tags: EPC E-mode GaN FETs


Book This Space