17 May 2022
Sensitron introduces GaN half-bridge module using 350V EPC2050 eGaN FET
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA says that, by replacing traditional silicon FETs with its 350V, EPC2050 enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistor (FET), Sensitron of Hauppauge, NY, USA – which manufactures high-reliability power electronic components for defense, aerospace, space and medical markets – was able to reduce the size of its solution by 60% while also improving the module’s already excellent junction-to-case thermal conduction.
Sensitron’s SPG025N035P1B is a high-power-density 350V, 20A GaN half-bridge with an integrated gate drive, optimized for stray inductance and switching performance at 500kHz. Rated at 20A, the module can be used to control over 3kW. Sensitron’s proprietary topside cooling technology on this ultra-small, lightweight high-power-density package (1.10” x 0.70” x 0.14”) allows for optimal thermal performance. The SPG025N035P1B was designed for commercial, industrial and aerospace applications.
The SPG025N035P1B module uses the EPC2050, a 350V-rated GaN FET with 80mΩ maximum RDS(on), 26A peak current power in an extremely small chip-scale package that measures just 1.95mm x 1.95mm. The EPC2050 provides Sensitron with a high-efficiency solution due to the low switching losses, and a high-power-density solution due to the extremely small size. The EPC2050 is also suitable for multi-level converters, electric vehicle (EV) charging, solar power inverters, light detection & ranging (LiDAR), and LED lighting.
“By using the ultra-small EPC2050 GaN FET, we could design a 350V half-bridge module with higher efficiency and a third the size of alternative silicon solutions allowing us to capture very high-density applications,” comments Richard Locarni, Sensitron’s director of New Business Development.
“This application is a great example of the real benefits that GaN brings,” says CEO Alex Lidow. “We have worked closely with Sensitron to find the best GaN FET to meet the design challenges that the power-density requirements of their module demands.”