AES Semigas


10 May 2022

Infineon extends CoolSiC portfolio to 2kV voltage class

The increasing demand for high power density is pushing developers to adopt 1500VDC links in their applications to increase the rated power-per-inverter and reduce system costs. However, 1500VDC-based systems also pose more challenges on the system design, such as fast switching at high DC voltage, which typically requires a multi-level topology. This leads to a complicated design and a relatively high number of components.

Infineon Technologies AG of Munich, Germany says that, to address this challenge, it has introduced its expanded CoolSiC portfolio with high-voltage solutions to provide the foundation for next-generation photovoltaic, electric vehicle (EV) charging and energy storage systems.

Picture: Infineon’s new 2kV silicon carbide MOSFET.

The extended CoolSiC portfolio offers 2kV silicon carbide (SiC) MOSFETs, along with a 2kV SiC diode for applications up to 1500VDC. The new SiC MOSFET combines both low switching losses and high blocking voltage in one device that can optimally meet the requirements of 1500VDC systems. The new 2kV CoolSiC technology offers a low drain–source on-resistance (RDS(on)) value. In addition, the rugged body diode is suitable for hard switching. The technology enables sufficient over-voltage margin and offers ten times lower failure-in-time (FIT) rate caused by cosmic rays, compared with 1700V SiC MOSFETs. Furthermore, the extended gate voltage operating range makes the devices easy to use, says the firm.

The new SiC MOSFET chip is based on Infineon’s M1H SiC MOSFET technology (introduced in mid-April). The latest advances enable a significantly larger gate voltage window that improves the on-resistance for a given die size. Simultaneously, the larger gate voltage window provides a high robustness against driver- and layout-related voltage peaks at the gate, without any restrictions even at high switching frequencies. Infineon offers a range of EiceDRIVER gate drivers with functional isolation of up to 2.3kV to support the 2kV SiC MOSFETs.

Samples of the 2kV CoolSiC MOSFETs are available now in EasyPACK 3B and 62mm modules, and later in a new high-voltage discrete TO247-PLUS package. In addition, Infineon offers a design-in eco-system with a 2.3kV isolation-capable EiceDRIVER. The start of production of the Easy 3B (DF4-19MR20W3M1HF_B11) – a power module with four boost circuits that acts as the MPPT (maximum power point tracking) stage of a 1500V PV string inverter – is planned for third-quarter 2022, with the 62mm module in half-bridge configuration (3mΩ, 4mΩ, 6mΩ) to follow in fourth-quarter 2022. The discrete devices utilizing the latest.XT interconnection technology will be available by the end of 2022.

See related items:

Infineon extends CoolSiC M1H technology portfolio with 1200V SiC MOSFETs

Tags: Infineon SiC MOSFET


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