AES Semigas


9 November 2022

CGD demos GaN power devices at Electronica for first time

Fabless semiconductor company Cambridge GaN Devices Ltd (CGD) is participating for the first time at Electronica 2022 in Munich, Germany (15-18 November), when it will take part in the conference proceedings as well as showcasing GaN devices and discussing strategic partnerships.

Spun out of the University of Cambridge Department of Engineering’s Electrical Power and Energy Conversion group in 2016 by Dr Giorgia Longobardi and professor Florin Udrea, CGD designs, develops and commercializes power semiconductors products that use gallium nitride (GaN)-on-silicon substrates.

At Electronica, chief technology officer Udrea is taking part in a panel discussion ‘Gallium Nitride – Beyond Consumer Electronics’ on 16 November (at 1pm CET, hall C3, stand 577) moderated by Ralf Higgelke, specialist Power editor at Markt & Technik.

Also speaking during the Embedded Platform Conference of the Power Electronics program, taking place in the ICM (International Congress Center) within the Messe München complex, is CGD power electronics engineer Dr Nirmana Perera on ‘The challenges & possibilities of GaN devices in Parallel’ (10.30am CET, 16 November).

In booth C3.535, CGD is showing what it claims is the industry’s first easy-to-use and scalable 650V GaN HEMT family. Its ICeGaN H1 series comprises single-chip eMode high-electron-mobility transistor (HEMT) devices that can be driven like a MOSFET, without the need for special gate drivers, complex and lossy driving circuits, negative voltage supply requirements or additional clamping components.

ICeGaN HEMTs require no cascode structure, no complex multi-chip configurations, and no thermally complex integrated solutions. Instead, they are single-chip solutions with embedded proprietary logic that enables coupling with standard gate drivers or controllers.

Launched in March, H1 ICeGaN HEMTs are now available for volume production applications following a scale-up financed by two funding rounds.

Key to CGD’s go-to-market plans are strategic partnerships. At Electronica, the firm is giving two demos developed with key partners: a full 3kV photovoltaic solar inverter; and a Class D audio amplifier. The booth also features many demos developed by CGD, including a 65W QR flyback reference design, a 350W PFC/LLC reference design and a 3kW LLC platform.

“Power electronics is now at the centre of a global movement to improve society by turning away from old fossil-fuel-burning technologies to new energy-efficient solutions,” says Longobardi. “GaN is right at the heart of this movement.”

See related items:

Cambridge GaN Devices debuts first commercial products

Cambridge GaN Devices raises $9.5m Series A funding

Tags: GaN power devices



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