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17 November 2022

EPC launches 80V, 4mΩ GaN FET in 1.5mm x 2.5mm footprint

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications – has launched the 80V, 4mΩ EPC2619 as the lead product of a new generation of eGaN devices that have double the power density compared with EPC’s prior-generation products.

The EPC2619 has an RDS(on) of just 4mΩ in a 1.5mm x 2.5mm footprint. The maximum R DS(on) x Area is 15mΩ*mm2 – five times smaller than 80V silicon MOSFETs.

This product is designed for a range of motor drive applications, e.g. 28V–48V conversion for e-bikes, e-scooters and power tools; high-density DC–DC converters; solar optimizers; and synchronous rectification converting 12V–20V for chargers, adaptors and TV power supplies.

The typical R DS(on) x QGD, which is indicative of power losses in hard-switching applications, is 10 times better than 80V silicon MOSFETs. This enables switching frequencies that are 10 times higher than silicon MOSFETs and without an efficiency penalty, thus producing the highest power density.  This makes the EPC2619 suitable for high-frequency hard-switching 24V–48V applications, such as used in buck, buck–boost, and boost converters.

The typical R DS(on) x QOSS, which is indicative of power losses in soft-switching applications, is 87mΩ*nC, two times better than 80V silicon MOSFETs. This makes the EPC2619 suitable for soft-switching applications, such as the primary rectification full-bridge for LLC-based DCX DC–DC converters.

“This is just the first product of a new generation of discrete transistors and integrated circuits for EPC,” notes CEO & co-founder Alex Lidow. “With the launch of the EPC2619, EPC continues to keep GaN power devices on a path reminiscent of Moore’s Law.”

The EPC90153 development board is a half-bridge featuring the EPC2619 GaN FET. It is designed for 80V maximum device voltage and 30A maximum output current. The purpose of this board is to simplify the evaluation process of power systems designers to speed their product’s time to market. This 2” x 2” (50.8mm x 50.8mm) board is designed for optimal switching performance and contains all critical components for easy evaluation.

The EPC2619 is priced at $1.90 each in 2.5Ku volumes. The EPC90153 development board is price at $200 each.

Tags: EPC E-mode GaN FETs

Visit: www.epc-co.com

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