AES Semigas


4 November 2022

HG begins production of GaN power electronics epiwafers

Hong Kong-based HG Semiconductor Ltd recently began manufacturing its own 6-inch gallium nitride (GaN) power electronics epitaxial wafers, which have hence now officially entered full-scale production. This was far earlier than the expected timetable, as the firm’s technical team has capitalized on its experience to debug production facilities and technology in just three months, paving the way to the rapid industrialization and mass production of GaN ‘third-generation’ semiconductors.

The GaN epiwafer market reached US$420m in 2021, and is projected to rise at a compound annual growth rate (CAGR) of 21.2% from 2022 to US$1.5bn in 2028.

HG Semiconductor reckons that epiwafer manufacturing represents a “giant leap” in reaching its ultimate goal of the mass production of chips. The firm now expects to begin pilot production of chips in second-quarter 2023, followed by mass production by early 2024. Also, in second-half 2022, the firm has launched GaN-related fast-charging products.

See related items:

HG enters into strategic cooperation framework agreement with GCL

HG places new shares and announces subscription of shares and warrants by GCL’s founder

HG collaborating with China Titans Energy on GaN-based fast-charging

HG makes strategic investment in GaN Systems

Tags: GaN Systems


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