News: Microelectronics
21 November 2022
Hunan Sanan secures $524m SiC chip order for NEV power systems
China’s Sanan Optoelectronics Co Ltd says that its subsidiary Hunan Sanan has signed a procurement letter of intent (LOI) agreement to supply silicon carbide (SiC) chips worth US$524m over the next few years for the new electric vehicle (NEV) product line of a strategic automotive partner. Hunan Sanan’s SiC technology will provide energy for the NEV power system for medium- and high-voltage platforms.
“Our agreement with this strategic partner further demonstrates the automotive industry’s commitment to providing innovative electrification experience to the market and leveraging the advantages of wide-bandgap semiconductors to improve overall vehicle performance,” says Hunan Sanan’s general manager Tony Chiang. “The agreement ensures a long-term supply of SiC to our customer to help them realize their promise of low-carbon, smart mobility.”
Picture: Hunan Sanan’s fab in Changsha.
The SiC chips will be manufactured in Hunan Sanan’s mega fab in Changsha, the first vertically integrated SiC wafer manufacturing service platform in China, which provides an in-house supply chain from SiC crystal, substrate, epitaxy, chip manufacturing, packaging and testing, with a committed annual production capacity of 500,000 SiC 6-inch wafers. Hunan Sanan recently obtained IATF 16949 system certification, while the automotive-grade SiC MOSFETs have been verified with the cooperation of strategic partners, and are expected to be released in production in 2024. Sike Semiconductor, a company jointly established by Hunan Sanan and Li Auto, also officially started construction in August and is expected to begin production in 2024 with a planned annual production capacity of 2.4 million half-bridge SiC power modules.
Sanan IC enhances foundry platform for wide-bandgap power semiconductors
Sanan IC announces commercial release of 6” SiC wafer foundry process
