AES Semigas


14 November 2022

Infineon and Stellantis sign MoU for SiC chip supply deal

Infineon Technologies AG of Munich, Germany and global automaker Stellantis have signed a non-binding memorandum of understanding (MoU) as a first step towards a potential multi-year supply cooperation for silicon carbide (SiC) semiconductors. Infineon would reserve manufacturing capacity and supply CoolSiC bare die chips in the second half of the decade to the direct tier-1 suppliers of Stellantis. The potential sourcing volume and capacity reservation have a value of significantly more than €1bn.

“We firmly believe in electro-mobility and are excited to develop partnerships with leading automotive companies like Stellantis that make it a part of people’s everyday life,” says Peter Schiefer, division president Automotive at Infineon. “Compared to traditional power technologies, silicon carbide increases the range, efficiency and performance of electric vehicles. With our leading CoolSiC technology and continuous investments in our manufacturing capacities, we are well positioned to meet the growing demand for power electronics in electro-mobility,” he adds.

Infineon and Stellantis are in talks about delivering the CoolSiC Gen2p 1200V and CoolSiC Gen2p 750V chips for electric vehicles under Stellantis brands. The performance, reliability and quality of CoolSiC technology would allow Stellantis to build vehicles with longer ranges and lower consumption – and support the company in its efforts to standardize, simplify and modernize platforms, says Infineon.

As a high-volume supplier to the automotive industry, Infineon is preparing for the accelerated demand of the industry with significant investments. In 2024, for example, its new fab for SiC technologies will start manufacturing in Kulim, Malaysia, complementing existing manufacturing capacities in Villach, Austria, in accord with Infineon’s multi-site strategy.

Tags: Infineon


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