AES Semigas


24 October 2022

EPC extends packaged GaN FET family to 150V

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications – has expanded its selection of off-the-shelf GaN FETs in thermally enhanced QFN packages by introducing the 150V EPC2308 designed for motor drives in power tools and robots, high-density DC-DC from/to 80V–100V for industrial applications, synchronous rectification to 28V–54V for chargers, adaptors and power supplies, smartphone USB fast chargers, and in solar optimizers and micro-inverters.

The EPC2308 GaN FET offers a small on-resistance (RDS(on)) of just 4.9mΩ typical, together with very small QG, QGD and QOSS parameters for low conduction and switching losses. The device features a thermally enhanced QFN package with footprint of just 3mm x 5mm, offering an extremely small solution size for the highest-power-density applications.

The package offers wettable flanks to simplify assembly and inspection and exposed top and ultra-low thermal resistances to optimize thermal dissipation through heat-sink for cooler operation.

The EPC2308 is footprint compatible with the previously released 100V, 1.8mΩ EPC2302 and the 100V, 3.8mΩ EPC2306.

“The EPC2308 combines the advantages of 150V GaN with an easy-to-assemble and thermally enhanced QFN package,” says CEO & co-founder Alex Lidow. “Designers can use our family of packaged GaN FETs to make smaller and lighter-weight battery-operated BLDC [brushless DC] motor drives for robotics and power tools, higher-efficiency 80V input DC-DC converters, and higher-efficiency USB chargers and power supply.”

The EPC90148 development board is a half bridge featuring the EPC2308 GaN FET. It is designed for 150V maximum device voltage and 12A maximum output current. The purpose of this board is to simplify the evaluation process to speed time to market. This 2” x 2” (50.8mm x 50.8mm) board is designed for optimal switching performance and contains all critical components for easy evaluation.

The EPC2308 is priced at $3.75 each in 1000-unit volumes. The EPC90148 development board is priced at $200 each.

Tags: EPC E-mode GaN FETs