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24 October 2022

Innoscience completes 650V GaN HEMT range

Innoscience Technology of Suzhou, China has filled out its portfolio of 650V enhancement-mode (E-mode) gallium nitride high-electron-mobility transistors (GaN HEMTs) by adding devices with on-resistances (RDS(on)) of 190mΩ, 350mΩ and 600mΩ. Available in industry-standard 8x8 and 5x6 DFN packages, they join the previously announced 140mΩ, 240mΩ and 500mΩ RDS(on) parts.

The 650V HEMTs are all qualified to JEDEC standards for chip and package, and have passed dynamic high-temperature operating life-test (DHTOL) reliability testing according to JEP180 (JEDEC’s newly released guidelines dedicated to GaN technology). In addition, Innoscience’s 650V HEMTs (InnoGaN) have undergone accelerated life-tests beyond 1000V that give lifetime calculations of 36 years at 80% of the rated voltage (520V; 150°C; 0.01% failure rate).

The new devices also feature very good drain–source voltage transient (VDS, transient) of 800V for non-repetitive events with an extended pulse time up to 200µs and pulsed (VDS, pulsed) characteristics for a repetitive pulse up to 100ns of 750V for the 190mΩ RDS(on) parts (claimed to be best-in-class characteristics). Moreover, similarly to the existing 650V products, the new 190mΩ, 350mΩ and 600mΩ RDS(on) devices all feature a strong ESD protection circuit embedded in the die to ease mass-production assembly of these device in package and easy handling.

Possible applications of the new devices include power factor correction (PFC) converters, DC–DC converters, LED drivers, fast battery chargers, notebook and all-in-one (AiO) adaptors and power supplies for desktop PC, TV, power tools etc.

“These new devices complete our 100–600mΩ device portfolio at 650V,” notes Yi Sun, senior VP of product development. “I am especially happy to add the 650V/190mΩ, as it is becoming a standard in the GaN industry that offers greater flexibility to customers upon selecting suppliers for their applications.”

Because GaN devices do not have a body diode, reverse recovery losses are much less than silicon MOSFETs and the figure of merit (FOM) is much better, notes Innoscience. So, GaN HEMTs (such as Innoscience’s new 650V parts) can be used in simple totem-pole configurations for PFC applications, and benefit from the reduced bill-of-materials (BOM) count without incurring the high losses of conventional silicon devices, the firm says. This benefit, combined with the high-frequency capabilities of InnoGaN, helps to reduce the size of passives and results in more compact systems, it adds.

Tags: GaN-on-Si

Visit: www.innoscience.com

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