AES Semigas


4 October 2022

Navitas showcases pure-play WBG solutions for EVs at ECCE 2022

Navitas Semiconductor of El Segundo, CA, USA and Dublin, Ireland is showcasing gallium nitride (GaN) and silicon carbide (SiC) wide-bandgap (WBG) semiconductor technologies at the IEEE Energy Conversion Congress & Expo (ECCE 2022) in Detroit, Michigan (9-13 October), which features both industry-driven and application-oriented technical sessions, as well as industry expositions and seminars in electrical and electromechanical energy conversion.

With US auto sales forecasted to be mostly electric vehicles (EVs) by 2030, Navitas’ 650V-rated GaNFast power ICs with GaNSense technology are optimized for the broad range of 400V-rated EV battery applications and AC-interfacing. New Navitas GeneSiC 1200V FETs and diodes address 800V-rail applications for higher-power trucks, buses and performance passenger cars.

The firm also says that its EV System Design Center provides complete platform designs to accelerate time-to-market, including a 3-in-1 800V-rated bi-directional charger and DC-DC converter, with up to 18% weight savings, up to 20% energy savings, and up to 65% faster charging than competing solutions, it is reckoned.

“Upgrading from legacy silicon to GaN and SiC accelerates EV adoption by two years,” says Llew Vaughan-Edmunds, senior director of marketing. “ECCE is a critical forum for professionals working to optimize power conversion across the EV landscape, and a fertile environment for detailed discussions on new technology adoption,” he adds.

On Monday 10 October at ECCE 2022, Navitas is featuring in a focus session on SiC and GaN applications in EVs (from 12.30pm to 2.10pm, EST).

See related items:

Navitas acquires GeneSiC, accelerating entry into EV, solar and energy storage markets by 2-3 years

Tags: GaN Power electronics GeneSiC