19 October 2022
Navitas showcasing GaN & SiC power semiconductors at Electronica
In booth B4.126 at the Electronica 2022 trade fair and conference at Messe München in Munich, German (15-18 November), Navitas Semiconductor of El Segundo, CA, USA and Dublin, Ireland is showcasing its portfolio of gallium nitride (GaN) and silicon carbide (SiC) wide-bandgap (WBG) semiconductor technologies, for application ranging from 20W to 20MW, including the following:
- new 650V, MHz GaNSense gallium nitride half-bridge power ICs, with autonomous, loss-less sensing and 6x faster protection;
- new 750V-6.5kV GeneSiC silicon carbide power MOSFETs with what is claimed to be industry-leading high-temperature, high-speed performance;
- mobile fast-chargers up to 200W with 0-100% charge in less than 10 minutes;
- EV on-board charger and DC-DC designs up to 22kW, up to 20% smaller and lighter;
- ‘Titanium Plus’ efficiency 2.7kW power supplies for data centers;
- high-speed, high-efficiency motor drives for home appliance and industrial automation.
“As the only pure-play, next-generation power semiconductor company, this is a breakthrough year for Navitas into the European high-power and industrial markets,” says Alessandro Squeri, senior director European sales. “Adding leading-edge GeneSiC SiC power to the already growing GaNFast GaN power IC line-up gives us an immediate boost in portfolio and addressable markets,” he adds. “We’ve almost doubled the market opportunity to over $22bn/year, and Electronica is the perfect forum to accelerate customer engagement and design wins.”
At Electronica on 16 November, Navitas is also reviewing the latest technology and market advances in two panel discussions:
- ‘Power Electronics Forum: Wide Bandgap Semiconductors’ (Aspencore media), by Stephen Oliver, VP corporate marketing & IR (10:40am, A4.473);
- ‘Gallium Nitride Beyond Consumer Electronics’ (WEKA Fachmedien), by CEO & co-founder Gene Sheridan (1pm, C3.577).