AES Semigas


7 September 2022

Altum RF launches 400W S-band power amplifier MMIC

In collaboration with Eindhoven-based research institute TNO (the Netherlands Organization for Applied Scientific Research in Delft), Altum RF (which designs high-performance RF to millimeter-wave solutions for commercial and industrial applications), has introduced a 400W S-band power amplifier monolithic microwave integrated circuit (MMIC), using the NP45-11 technology of compound semiconductor wafer foundry WIN Semiconductors Corp of Taoyuan City, Taiwan.

Operating at 2.8-3.3GHz, the amplifier delivers output power of 400W and power-added efficiency (PAE) of 50-55% and is suited to S-band radar applications. WIN’s NP45-11 process is a 0.45μm RF gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) technology manufactured with enhanced moisture protection, enabling the use of a plastic package.

Altum RF’s strategic relationship with TNO results in what are said to be leading-edge RF to millimeter-wave products and technology for commercial markets and applications. This collaboration allows Altum RF to commercialize some of TNO’s unique technical capabilities.

“We are looking forward to industrializing this innovative S-band technology, and we see this as a logical extension of our catalog,” says Niels Kramer, Altum RF managing director Europe & VP marketing. “Altum RF continues its strategic focus to expand our product portfolio from X-band and beyond,” he adds.

“Building on more than 30 years of leading-edge phased-array HPA[high-power amplifier] research, it is impressive to see the outstanding performance this S-band power amplifier can achieve, using WIN Semiconductors’ advanced GaN technology, and we are equally excited about the ability to commercialize it with Altum RF,” comments Kemo Agovic, market director Information and Sensor Systems at TNO. “We expect even more innovations in the future with this solid strategic partnership,” he adds.

“Both Altum RF and TNO have extensive experience using WIN’s compound semiconductor technologies to achieve market-leading performance, and we are delighted to be the RF GaN technology partner for this new product,” says David Danzilio, WIN’s senior VP, technology & strategic marketing.

Tags: Microwave WIN Semiconductors


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