AES Semigas


27 September 2022

Ampleon showcases new 700W L-band GaN-SiC HEMT at EuMW

In booth #B36 at European Microwave Week (EuMW 2022) in Milan, Italy (27-29 September), Ampleon Netherlands B.V. of Nijmegen, The Netherlands is showcasing its latest solutions and products in gallium nitride (GaN) and LDMOS technologies, including those targeting wireless infrastructure, avionics/defence, non-cellular communication, cooking/defrosting, and industrial, scientific & medical (ISM)-related applications.

A key highlight is the new CLL3H0914L-700 gallium nitride on silicon carbide (GaN-SiC) high-electron-mobility transistor (HEMT). This rugged GaN transistor is optimized for radar implementations where long pulse width and high duty cycles are required. The transistor was engineered to achieve over 700W of peak output power from a single transistor while operating at a voltage of 50V with industry-leading efficiency of over 70% as well as designed thermally for long-pulse applications, such as pulse widths (~2ms) and 20% duty cycles.

The L-band GaN HEMT’s superior performance capabilities are demonstrated in a variety of application reference designs shown at the booth, including ones for defence/aerospace bands (960-1250MHz and 1030-1090MHz) plus an L-band ground base radar (1200-1400MHz).

The CLL3H0914LS-700 high-power-density and low-thermal-resistance HEMT is now in full volume production. Units are available directly from Ampleon or authorized distribution partners RFMW and Digi-Key. Large-signal models in ADS and MWO can be sourced via Ampleon’s website.

See related items:

Ampleon showcasing new products at IMS

Tags: GaN RF



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