AES Semigas


20 September 2022

III-V Epi produces InP-based telecoms laser structures for University of Surrey

III-V Epi Ltd of Glasgow, Scotland, UK — which provides a fast-turnaround molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) service for custom compound semiconductor wafer design, manufacturing, test and characterization — has produced experimental telecoms laser structures targeting temperature-insensitive operation. The epitaxy development was for the University of Surrey, funded by a UK Engineering and Physical Sciences Research Council (EPSRC) Impact Acceleration Account.

“The team at III-V Epi is helping us to develop robust and practical indium phosphide (InP)-based epitaxial wafers for telecoms lasers that eliminate the need for expensive, energy-hungry cooling systems,” says lead researcher professor Stephen Sweeney at the University of Surrey, who is managing the project. “III-V Epi provided design and engineering expertise in the choice of material systems and manufacturability, which informed our design simulations,” he adds. “III-V Epi went on to produce wafers by MOCVD for the university to process, test and further optimize. The resulting lasers will be a breakthrough in the industry, with this development enabled by III-V Epi’s world-class service and expertise.”

The University of Surrey is one of 36 institutions with an EPSRC Impact Acceleration Account, which provides rapid access to funds from UK Research and Innovation (UKRI) for knowledge exchange, innovation and impact – such as proof-of-concept, commercialization and market validation projects of this type.

Tags: Epitaxy



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