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15 September 2022

Odyssey achieves 1200V rating on vertical GaN power devices

Odyssey Semiconductor Technologies Inc of Ithaca, NY, USA, which is developing high-voltage vertical power switching components based on proprietary gallium nitride (GaN) processing technology, says that it has reached its stated goal of 1200V rating on vertical GaN power field-effect transistors (FETs). The firm is now applying this validated technology to fabricate product samples in fourth-quarter 2022 for internal and customer evaluations, planned through first-quarter 2023.

Recently accomplished milestones are cited as:

  • being on-track to build Gen1 product samples of 650V and 1200V power devices in Q4/2022;
  • validating figures-of-merit for both 650V and 1200V power devices that will provide what is reckoned to be industry-leading efficiency with low on-resistance at high switching frequencies for reduced solution size;
  • validating a process for large-scale device fabrication, currently in use to manufacture product samples;
  • securing commitments from three customers to evaluate Gen1 product samples (expanded customer engagement is underway to confirm additional customers for product samples).

“We are emerging from process and materials R&D to delivering products at voltages that lateral GaN can’t practically reach with economics unattainable by silicon and silicon carbide,” says CEO Mark Davidson. “Our vertical GaN products will deliver high power conversion efficiency at almost 10x smaller than a silicon carbide transistor for the same application,” he adds.

“We are not just fabricating test structures. We’re building product samples that customers need,” continues Davidson. “Odyssey continues to close new commitments for product samples as customers gain a full understanding of the capabilities of Odyssey’s power devices. The company is uniquely positioned with the expertise and the IP portfolio to protect it. And with our own foundry in Ithaca, New York, we can innovate quickly and control our ability to supply products to customers.”

Odyssey says that the market it is pursuing is large and fast growing. It claims that its approach to vertical GaN can offer an even greater improvement that silicon, silicon carbide (SiC) and lateral GaN cannot deliver. The 650V segment is the larger market today, expected to grow at a compound annual growth rate (CAGR) of 20%. But the 1200V product market segment is expected to grow faster (at 63% CAGR), becoming the larger market segment in the second half of this decade. Collectively, the 650V and 1200V power device market is expected to grow at a combined CAGR of 40% to about $5bn in 2027, according to market analyst firm Yole Développement.

See related items:

Odyssey demos 700V vertical GaN power FETs; targets 1200V next

Tags: Power electronics

Visit: www.odysseysemi.com

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