AES Semigas


12 September 2022

Tagore launches antenna-tuning SP4T RF switch with 100V peak RF voltage and 1Ω on-resistance

Fabless semiconductor company Tagore Technology Inc – which was founded in 2011 and has design centers in Arlington Heights, IL, USA and Kolkata, India developing gallium nitride-on-silicon (GaN-on-Si) technology for RF and power management applications – has launched the feature-rich TS63421K antenna-tuning switch, which is claimed to offer best-in-class insertion loss, power handling and harmonic performance, and is suitable for filter and antenna tuning, dynamic matching in private radio access points, and public safety equipment.

Designed with Tagore’s second-generation gallium nitride on silicon carbide (GaN-SiC) process, the new TS63421K reflective open single-pole four-throw (SP4T) switch is suitable for antenna or filter tuning applications where high RF peak voltage handling is desired. The device offers what is claimed to be the industry’s lowest on-resistance (Ron) of 1Ω and off-capacitance of 0.2pf and can handle peak RF voltage of 100V. The RF switch is configured as a four-throw output that can be independently controlled and, therefore, can have 16 different states or tuning values.

“This GaN-SiC SP4T device is great for antenna tuning applications with antenna optimization to improve efficiency, resulting in higher overall performance compared to our first-generation product,” says chief sales & marketing officer Klaus Buehring. “This improved efficiency results in higher data throughput, increased battery life and a longer range for fewer dropped calls.”

The TS63421K is available in a 3x3-QFN plastic package and requires no external components, making it suitable for low-SWaP applications. The new antenna tuning RF switch is compatible with existing products, allowing customers to enhance radio performance by switching to the latest version of the second-generation product.

Tags: GaN-on-SiC HEMT