AES Semigas


26 April 2023

EPC showcasing latest-generation GaN power semiconductors at PCIM Europe

At the Power, Control and Intelligent Motion (PCIM) Europe 2023 event in Nuremberg, Germany (9–11 May), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications – is featuring what is claimed to be the industry’s broadest portfolio of GaN power conversion solutions.

Specifically, in exhibition stand 318 (Hall 9), EPC is giving live demonstrations of the latest GaN technology in real-world applications including 48V DC power for vehicle electrification; motor drives for robotics, e-mobility, and drones; 48V DC power density for computing and telecommunications; and highly efficient and reliable solar power.

Also at PCIM, EPC is involved in the following technical presentations featuring GaN FETs and integrated circuits:

10 May

  • ‘The Future of GaN Devices Below 400V, Including Key Applications and Five-Year Roadmap’, presented by Alex Lidow Ph.D. (12:25pm CET);
  • Panel: ‘Wide Bandgap Design with GaN HEMT and Vertical GaN’, panelist Alex Lidow Ph.D. (1:05pm CET).

11 May

  • Panel: ‘Reliaiblity and Quality Requirements for SiC and GaN Power Devices’, panelist Alex Lidow Ph.D. (12:10pm CET);
  • ‘High Power Density, Bi-Directional, 48V to 12V Converter using eGaN® FETs for Next Generation BEV’s’, presented by Michael de Rooij Ph.D. (3pm CET);
  • ‘Modeling and Experimental Validation of GaN-based Switching Leg in Inverter Topology for Motor Drive Applications’, presented by Marco Palma.

Tags: EPC E-mode GaN FETs



Book This Space