AES Semigas


5 April 2023

ROHM presenting SiC- and GaN-based solutions for e-mobility and energy conversion at PCIM Europe

In booth 310 (hall 9) at the Power, Control and Intelligent Motion (PCIM) Europe 2022 trade fair in Nürnberg Messe, Nuremberg, Germany (9–11 May), ROHM Semiconductor is showcasing its new power semiconductors that advance sustainable technologies – including high-performance solutions for the e-mobility sector and beyond.

At PCIM, ROHM is presenting solutions for key technologies – revolving around energy-saving, miniaturization, functional safety, innovation, and sustainability. Specifically, product highlights include:

  • 4th-Generation SiC MOSFET: ROHM’s silicon carbide (SiC) MOSFET technology realizes what is claimed to be industry-leading low ON-resistance (RDSon), minimizing switching losses and supporting 15V and 18V gate–source voltage. It is said to contribute to miniaturization and low power consumption in various applications including automotive inverters and various switching power supplies.
  • New molded SiC power modules: ROHM has expanded its package portfolio with HSDIP20 and DOT247, incorporating the latest 4th-generation SiC MOSFET 750V and 1200V devices with various values of RDSon. Both achieve up to 30kW power application, depending on conditions.
  • Built-in 1700V SiC-MOSFET: the BM2SC12xFP2-LBZ series is a quasi-resonant AC/DC converter that provides an optimum system for all products that have an electrical outlet.
  • 150V GaN HEMT: ROHM’s 150V gallium arsenide (GaN) HEMT GNE10xxTB is optimized for power supply circuits in industrial and communication equipment for what is claimed to be industry-highest (8V) gate breakdown voltage technology.

At PCIM, ROHM is also exhibiting enhancements to its IGBT and GaN product portfolio.

In addition, the firm’s representatives are participating in panel discussions, conference presentations and presentations at its booth, as well as in poster sessions.

Tags: Rohm



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