AES Semigas


19 April 2023

Taiyo Nippon Sanso selling lower-moisture RASIRC BRUTE-Hydrazine anhydrous material

Taiyo Nippon Sanso Corp (TNSC) of Tokyo, Japan says that it is to sell anhydrous hydrazine (N2H4) material BRUTE-Hydrazine (manufactured by California-based TNSC group company RASIRC Inc) with even lower moisture content than that of its existing product.

Contamination with impurities such as moisture during manufacturing can negatively affect the semiconductor crystal quality and electrical characteristics, which directly impact device characteristics and product yield. To resolve these issues, RASIRC has reduced the water concentration in the vapor phase of BRUTE-Hydrazine from 1/10 to 1/100 of that in conventional products by improving the purification technology. Due to the change in product specifications, sales of the existing product will be discontinued.

The latest specifications of BRUTE-Hydrazine comprise the following:

  • Version 7.0, with a filling volume of 250g or 1000g, and a H2O concentration in the N2H4 gas phase of <100ppb;
  • Version 8.0, with a filling volume of 250g, and a H2O concentration in the N2H4 gas phase of <10ppb.

BRUTE-Hydrazine is a liquid material that improves safety by mixing liquid anhydrous hydrazine with RASIRC's original organic solvents as stabilizers. Hydrazine vaporizes in the vessel headspace and is delivered to the point of use by carrier gases or vacuum transfer.

Compared with the usual nitridation source ammonia (NH3), hydrazine is more reactive and lowers the temperature of the deposition process, improving deposition rate and electrical properties. In addition, hydrazine can be applied not only as a nitridation source for film deposition but also for surface cleaning and film modification by taking advantage of its excellent reducing properties.

Going forward, TNSC aims to expand sales of BRUTE-Hydrazine, mainly for semiconductor manufacturing processing. Results for silicon nitride (SiN) film deposited via ALD using BRUTE-Hydrazine are being reported at the AVS 23rd International Conference on Atomic Layer Deposition (ALD 2023) in Seattle, WA, USA (23-26 July).

Tags: Taiyo Nippon Sanso