AES Semigas


19 April 2023

Transphorm GaN products exceed 125 billion field operating hours

Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC- and AEC-Q101-qualified gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion — says that in February its high-reliability GaN semiconductor products exceeded 125 billion field hours.

Transphorm says that its SuperGaN platform is differentiated through its patented GaN semiconductor technology and an IP portfolio encompassing over 350 directly owned and more than 1000 overall fundamental materials through applications patents, appraised at about $170m (based on Intracom Group Intellectual Property Solutions’ patent valuation models).

The firm claims that its GaN FET products:

  • offer best-in-class performance from low power to high power and across a variety of topologies, with ease of use and interface with standard drivers and controllers;
  • offer superior dynamic performance, resulting in higher efficiency with a smaller chip size versus other GaN products, or higher power from the same or smaller die size;
  • offer a much higher voltage rating, 650V, 900V and 1200V (under development), all exceeding the performance of SiC MOSFETs (650V, 1200V) and other GaN devices where such are available (i.e. at 650V lower power).

Transphorm says that its expanding network of blue-chip partners, including controller & integrated driver IC partners, allows it to efficiently expand its reference designs and solutions footprint, placing it in a strategic position to take full advantage of a growing market opportunity with best-in-class technology – performance of GaN with the look and feel of silicon (easy to use/interface).

“This milestone demonstrates our industry-leading reliability for both low-power and high-power applications of our GaN power solutions,” says president, chief operating officer & co-founder Primit Parikh. “The past year proved to be a critical step in positioning the company to reach this operating goal,” he adds. “From a business growth standpoint, exceeding 125 billion operating hours with very low sub-0.2 FIT rates across the power range, coupled with high performance of our patented solutions, further supports our confidence for growth from our fast-growing $500m+ long-term pipeline.”

See related items:

Transphorm releases new GaN FET reliability ratings, now segmented into low and high power levels

Tags: Transphorm GaN-on-Si GaN HEMT


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