AES Semigas


20 April 2023

Transphorm showcasing GaN power conversion solutions at PCIM

Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC- and AEC-Q101-qualified gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion — says that, in booth 108 (Hall 7) at the Power, Control and Intelligent Motion (PCIM) Europe 2023 trade fair in Nuremberg, Germany (9–11 May), its showcase will underscore its expanding footprint in market applications spanning the power spectrum. Devices on display demonstrate Transphorm’s ability to support low- to high-power systems with GaN power conversion solutions offering manufacturability, designability, drivability, and reliability.

Driving down BOM costs

The WT7162RHUG24A, the recently announced SuperGaN SiP (system-in-package) developed with Weltrend Semiconductor, is again on display following its first showing at the Applied Power Electronics Conference (APEC 2023). It is being shown alongside Weltrend’s high-efficiency, single-stage 65W USB-C PD 3.0 + PPS power adapter reference design built with the new integrated circuit. With an overall peak efficiency of ~94.0% and a power density of 26W/in3, the board presents a total, cost-effective solution for programmable adapters.

Demonstrating system performance increases

Transphorm’s device portfolio offers various options for engineers seeking power conversion performance. These devices come in performance packages or, should drop-in replacements be desired, pin-to-pin compatible industry-standard packages. An on-site static demonstration will show how replacing TSMC enhancement-mode (e-mode) devices with Transphorm FETs in a currently available gaming laptop charger significantly improved the system’s performance.

Simplifying GaN use in 3kW inverter systems

The recently announced TDINV3000W050B-KIT, a 3.0kW DC-to-AC non-isolated full-bridge inverter evaluation board, is on display for the first time. It pairs Transphorm’s TP65H050G4WS SuperGaN FET with Microchip Technology’s dsPIC33CK digital signal controller (DSC) board. The DSC board is equipped with pre-programmed firmware to enable understanding and quicken development of SuperGaN solutions in broad industrial and renewable power systems.

Diversifying automotive GaN solutions

Transphorm says that its technology expertise has enabled it to set key industry benchmarks for automotive-focused GaN power conversion solutions. The firm was first to market with an AEC-Q101-qualified 650V device. It is also the only GaN device maker to release an AEC-Q101 device qualified to 175°C. Also, at PCIM, Transphorm will again achieve a critical milestone by unveiling design resources for the 1200V GaN device first demonstrated a year ago. This device will complement the firm’s existing 650V solutions, enabling various electric vehicle applications.

Speaking engagement

At PCIM on 10 May (1:05pm CEST) during the Bodo’s Power Systems session on the Industry Stage (Hall 7, booth 480), Philip Zuk, senior VP, business development and marketing, is giving a presentation on the panel ‘Wide Bandgap Design with GaN HEMT and Vertical GaN’.

See related items:

Transphorm and Weltrend partner to release integrated GaN system-in-package

Tags: Transphorm GaN-on-Si GaN HEMT



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