AES Semigas


24 August 2023

Navitas unveiling new power platform at SEMICON Taiwan

Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor of Torrance, CA, USA says that, as part of its display in booth J2238 (Hall 1) at SEMICON Taiwan 2023 in the Nangang Exhibition Center (TaiNEX) in Taipei (6–8 September) – which it is sponsoring – it is revealing a new, high-performance wide-bandgap power platform.

Visitors can see how the latest GaNFast power ICs integrate gallium nitride power and drive, with control, sensing and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions.

Additionally, Navitas says that it is showcasing power-system platforms to accelerate customer developments, minimize time-to-market, and set new industry benchmarks in energy efficiency, power density and system cost. These system platforms include complete design collateral with fully tested hardware, embedded software, schematics, bill-of-materials, layout, simulation and hardware test results. Examples include:

  • Navitas’ CRPS185 data-center power platform delivers 3200W of power in only 1U (40mm) x 73.5mm x 185mm (544cc), achieving power density of 5.9W/cc (almost 100W/in3). This is a 40% size reduction versus the equivalent legacy silicon approach and reaches over 96.5% efficiency at 30% load, and over 96% spanning 20–60% load, creating a ‘Titanium Plus’ benchmark.
  • Navitas’ 6.6kW 3-in-1 bi-directional electrical vehicle (EV) on-board charger (OBC) with 3kW DC-DC is a 96%+-efficient unit with over 50% higher power density and, with efficiency over 95%, delivers up to 16% energy savings compared with competing solutions, it is claimed.

At 2pm on 6 September, as part of SEMICON Taiwan’s Power and Opto Semiconductor Forum (in room 402, 4F, TaiNEX 1), Navitas’ senior director of business development Charles Bailley is presenting ‘GaN Power ICs Increase Power Density in EV Power Systems’.

“Breakthrough high efficiency, high reliability and high power density – all from the new GaN power IC platform,” according to Kevin Wang, manager of Navitas Taiwan.

Tags: GaN Power electronics