AES Semigas


31 August 2023

ROHM launches power-stage ICs with built-in 650V GaN HEMTs and gate driver

Japan-based power semiconductor maker ROHM Co Ltd has developed the BM3G0xxMUV-LB series of EcoGaN power-stage ICs with built-in 650V gallium nitride (GaN) high-electron-mobility transistors (HEMTs) and gate driver, optimized for primary power supplies (AC-DC, PFC circuits) inside industrial applications (such as data servers and office automation devices) and consumer applications (such as home appliances, AC adapters, PCs, TVs, refrigerators, and air-conditioners).

In the interests of sustainability, the consumer and industrial sectors are increasingly demanding greater energy savings. However, while GaN HEMTs are expected to significantly contribute to greater miniaturization and improved power conversion efficiency, the difficulty in handling the gate compared to silicon MOSFETs requires the use of a dedicated gate driver. In response, ROHM has developed power-stage ICs that integrate GaN HEMTs and gate drivers into a single package by leveraging core power and analog technologies, considerably facilitating mounting (see Figure 2).

The BM3G0xxMUV-LB series (BM3G015MUV-LB, BM3G007MUV-LB) also incorporates additional functions and peripheral components designed to maximize GaN HEMT performance along with 650V GaN HEMTs (see Figure 3).

In addition, ROHM’s features such as a wide drive voltage range (2.5V to 30V), short propagation delay, and fast start-up time enable compatibility with virtually any controller IC in primary power supplies, facilitating the replacement of existing silicon (super-junction) MOSFETs. This makes it possible to simultaneously reduce component volume and power loss by about 99% and 55%, respectively, achieving higher efficiency in a smaller size (see Figure 4).

“GaN devices are attracting a great deal of attention in the industries as a device that greatly contributes to the miniaturization and energy saving of equipment,” notes Isaac Lin, general manager, PSADC (Power Semiconductor Applications Development Center), at Delta Electronics Inc. “ROHM’s new products have realized high speed and safe gate drive by using ROHM’s original analog technology,” he comments. “These products will further promote the use of GaN power devices.”

Products and evaluation boards BM3G007MUV-EVK-002 (PFC 240W), BM3G007MUV-EVK-003 and BM3G015MUV-EVK-003 will be offered at online distributors DigiKey, Mouser and Farnell as they become available.

See related items:

ROHM begins mass production of 650V GaN HEMTs

ROHM and Delta partner on developing and mass producing GaN devices

Tags: GaN HEMT Rohm


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