AES Semigas


31 August 2023

Toshiba releases third-generation SiC MOSFETs with reduced switching losses

Toshiba is now shipping the TWxxxZxxxC series of ten silicon carbide (SiC) MOSFETs based on the firm’s third-generation technology, targeted at reducing losses in a variety of industrial applications including switching power supplies for servers & data centers, electric vehicle (EV) charging stations, photovoltaic (PV) inverters and uninterruptible power supplies (UPS).

Devices in the TWxxxZxxxC series are the first Toshiba SiC products to be housed in a TO-247-4L(X) package with a fourth pin. This allows the provision of a Kelvin connection of the signal source terminal for the gate drive, reducing the parasitic inductance effects of the internal source wire and improving high-speed switching performance. Comparing the TW045Z120C with Toshiba’s existing TW045N120C (3-pin TO-247) shows an improvement in turn-on loss of about 40% while the turn-off loss is improved by about 34%.

The new TWxxxZxxxC series includes five devices with a drain–source (VDSS) rating of 650V and a further five devices rated at 1200V for higher-voltage applications. The typical drain–source on-resistance (RDS(ON)) ranges between 140mΩ and 15mΩ. Combined with low gate–drain charge (QGD) values, this can enable low losses even in high-frequency applications. The devices are capable of delivering continuous drain currents (ID) of up to 100A.

See related items:

Toshiba ships first 2200V dual SiC MOSFET module

Toshiba launches SiC 650V Schottky barrier diodes with forward voltage of 1.2V

Toshiba launches third-generation SiC MOSFETs

Tags: Toshiba