News: Optoelectronics
22 December 2023
ST supplying silicon carbide MOSFETs to Li Auto
STMicroelectronics of Geneva, Switzerland has signed a long-term agreement to supply its silicon carbide (SiC) MOSFET devices to China-based Li Auto (which designs, develops and manufactures electric vehicles) to support Li Auto’s strategy around high-voltage battery electric vehicles (BEVs) in various market segments.
As the automotive industry is transitioning towards electrification and decarbonization, high-voltage BEVs offer higher energy efficiency and extended mileage. Known for its extended-range electric vehicles (EREVs), Li Auto is entering the BEV market with its first high-tech flagship family MPV BEV model, premiered in fourth-quarter 2023. With plans to introduce more high-voltage BEV models soon, Li Auto will need large volumes of SiC MOSFETs that it will integrate into the traction inverters of its EVs.
ST’s SiC devices are said to increase performance and efficiency through higher switching frequencies, breakdown voltages, and thermal resistance, which are all particularly critical characteristics at the higher operating voltages required for BEVs. Li Auto is adopting ST’s third-generation 1200V SiC MOSFET in the traction inverter of its upcoming 800V BEV platform, in order to ensure process stability and performance, efficiency and reliability.
Claiming to hold more than 50% market share in SiC MOSFETs worldwide, ST says that its SiC technology is widely used in EV onboard chargers and power modules.
“ST has established long-term supply agreements with major car makers and tier-1 suppliers. The SiC supply agreement with Li Auto marks a significant step building upon our existing long-term relationship in other automotive applications,” says Henry Cao, executive VP of sales & marketing, China Region, STMicroelectronics. “ST is committed to supporting Li Auto’s ambition to become a top premium electric vehicle brand in China, offering their customers superior vehicle performance and range with our innovative SiC technologies.”
