News: Microelectronics
8 December 2023
Toshiba expands range of 3300V SiC MOSFET modules
Japan-based Toshiba Electronic Devices & Storage Corp (TDSC) – which was spun off from Toshiba Corp in 2017 – has expanded its lineup of chopper SiC MOSFET modules by launching the MG800FXF1ZMS3 and MG800FZF1JMS3, which have ratings of 3300V and 800A using third-generation silicon carbide (SiC) MOSFET and Schottky barrier diode SBD chips for industrial equipment.
The new MG800FXF1ZMS3 (with high-side SiC MOSFET; low-side: SiC SBD) and MG800FXF1JMS3 (with high-side SiC SBD; low-side: SiC MOSFET) adopt an iXPLV (intelligent fleXible Package Low Voltage) with Ag sintering internal bonding technology and high compatibility with mounting. These offer low conduction loss with low drain–source on-voltage (sense) of VDS(on)sense=1.3V (typical, tested at ID=800A, VGS=+20V, Tch=25°C). They also offer low turn-on switching loss (Eon) and turn-off switching loss (Eoff) of 230mJ (typical), both tested at VDD=1800V, ID=800A, Tch=175°C. These contribute to reducing the power loss of equipment and the size of cooling device.
Toshiba’s lineup of iXPLV-packaged MOSFET modules now spans three products, including the existing product MG800FXF2YMS3 (3300V/800A/dual-SiC MOSFET module), providing a wide range for product selection. This can be used in 2-level inverters, buck/boost converters and 3-level inverters.
Toshiba says that it continue to meet the market needs for high efficiency and the downsizing of industrial equipment. Applications include inverters and converters for railway vehicles; renewable energy power generation systems; and motor control equipment for industrial equipment, etc.
Toshiba releases third-generation SiC MOSFETs with reduced switching losses
Toshiba ships first 2200V dual SiC MOSFET module
Toshiba launches SiC 650V Schottky barrier diodes with forward voltage of 1.2V
