AES Semigas


31 January 2023

Diodes Inc launches its first silicon carbide Schottky barrier diodes

Power semiconductor product supplier Diodes Inc of Plano, TX, USA has released its first silicon carbide (SiC) Schottky barrier diodes (SBD). The portfolio includes the DSCxxA065 series comprising eleven products rated at 650V (4A, 6A, 8A and 10A) and the DSCxx120 series comprising eight products rated at 1200V (2A, 5A and 10A).

The wide-bandgap SBDs bring the benefits of significantly improved efficiency and high-temperature reliability, while also responding to market demands for reduced system running costs and low maintenance. The devices are suitable for AC–DC, DC–DC and DC–AC switching converters, photovoltaic inverters, uninterruptable power supplies (UPS), and industrial motor drive applications. They can also be used in a variety of other circuits, such as boost converters for power factor correction (PFC).

The efficient performance of the SiC devices is superior to that of conventional silicon-based products, and provide power supply designers with performance benefits such as:

  • Negligible switching losses due to low capacitive charge (QC) that provide high efficiency in fast switching applications. This is suitable for circuit designs with higher power density and smaller overall solution size.
  • Low forward voltage (VF) that further improves efficiency, reducing power losses and operational costs.
  • Reduced heat dissipation that helps lower overall system cooling budgets.
  • High surge current capability that increases robustness for better system reliability, while excellent thermal performance reduces build costs, says the firm.

Three package options include surface-mount TO252-2 (Type WX), through-hole TO220AC (Type WX) and ITO220AC (Type WX-NC).

The DSCxxA065 and DSCxx120 series are available for $1.24–2.33 and $1.70–6.68, respectively, in 1000-unit quantities.

Tags: SiC Schottky barrier diodes


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