News: Microelectronics
24 January 2023
EPC adds 80V, 11mΩ, AEC-Q101-qualified GaN FET
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications – has expanded its range of automotive, off-the-shelf GaN transistors with the introduction of the 80V, 11mΩ EPC2252, which delivers 75A pulsed current in a 1.5mm x 1.5mm footprint.
The EPC2252 is said to offer power system designers significantly smaller and more efficient devices than silicon MOSFETs for automotive-grade light detection & ranging (LiDAR) found in autonomous driving and other ADAS applications, 48V–12V DC-DC conversion, and low-inductance motor drives.
Lower switching losses, lower conduction losses, zero reverse recovery losses, and lower drive power enable high-frequency designs at high efficiency. Combined with an extremely small footprint, these factors enable what is claimed to be state-of-the-art power density.
The fast switching speed of GaN, with sub-nanosecond transitions and the capability to generate high-current pulses in less than 3ns, results in longer range and higher resolution in LiDAR for autonomous driving, parking, and collision avoidance.
“The EPC2252 makes an ideal switch for automotive LiDAR, low-inductance motors, and 48V DC-DC conversions,” says co-founder & CEO Alex Lidow. “EPC is committed to the automotive market with a growing family of devices that enable highly efficient, low-cost vehicle electrification and autonomous driving.”
The EPC2252 is priced at $0.91 each in 1000-unit quantities, and is available for immediate delivery from distributor Digi-Key Corp.
