AES Semigas


31 January 2023

EPC launches 200V, 10mΩ GaN FET

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications – has introduced the 200V, 10mΩ EPC2307 in a thermally enhanced QFN package in a 3mm x 5mm footprint.

The new device completes a family of six GaN transistors rated at 100V, 150V and 200V, offering higher performance, smaller solution size, and ease of design for DC–DC conversion, AC/DC SMPS and chargers, solar optimizers and micro-inverters, and motor drives.

The EPC2307 is footprint compatible with the previously released 100V, 1.8mΩ EPC2302, the 100V 3.8mΩ EPC2306, the 150V, 3mΩ EPC2305, the 150V, 6mΩ EPC2308 and the 200V, 5mΩ EPC2304, allowing designers to trade off on-resistance (RDS(on)) versus price to optimize solutions for efficiency or cost by dropping in a different part number in the same PCB footprint.

The devices feature a thermally enhanced QFN package with exposed top. The extremely small thermal resistance improves heat dissipation through a heatsink or heat spreader for excellent thermal behavior, while wettable flanks simplify assembly, and footprint compatibility offers design flexibility to specs change for fast time to market.

The family of devices is said to bring several benefits to motor drive designs including very short deadtimes for high motor + inverter system efficiency, lower current ripple for reduced magnetic loss, lower torque ripple for improved precision, and lower filtering for lower cost.

For DC–DC conversion applications, the devices offer up to five times higher power density, what is said to be excellent heat dissipation, and lower system costs in both hard switching and soft switching designs. Additionally, ringing and overshoot are both significantly reduced for better EMI.

“The continued expansion of this family of footprint-compatible, easy-to-assemble devices provides engineers the flexibility to optimize their designs quickly without delaying time-to-market,” says co-founder & CEO Alex Lidow. “This family of devices is ideal for smaller, lighter-weight motor drives, more efficient and smaller DC–DC converters, and higher-efficiency solar optimizers and micro-inverters.”

To simplify the evaluation process and speed time to market, the EPC90150 development board is a half-bridge featuring the EPC2307 GaN. The 2” x 2” (50.8mm x 50.8mm) boards are designed for optimal switching performance and contain all critical components for easy evaluation.

The EPC2307 is priced at $3.54 each in 1000-unit volumes. The EPC90150 development board is priced at $200 each. All devices and boards are available for immediate delivery from distributor Digi-Key Corp.

See related items:

EPC shipping lowest on-resistance 150V and 200V GaN FETs on market

EPC extends packaged GaN FET family to 150V

Tags: EPC E-mode GaN FETs