AES Semigas


12 January 2023

Finwave joins American Semiconductor Innovation Coalition

Finwave Semiconductor Inc of Waltham, MA, USA has joined the American Semiconductor Innovation Coalition (ASIC). ASIC recently expanded its membership to include representatives from all stages of the chipmaking supply chain, and Finwave will be joining fellow technology innovators to advance US semiconductor R&D.

ASIC is a coalition of more than 160 organizations developing a proposal to utilize CHIPS and Science Act funding – and serves as the main technical driver of the National Semiconductor Technology Center (NSTC) and the National Advanced Packaging Manufacturing Program (NAPMP). ASIC supports the research, development, prototyping and manufacturing transfer goals of the NSTC and NAPMP and ensures that they are met.

Founded in 2012 by researchers at Massachusetts Institute of Technology (MIT) as Cambridge Electronics before being rebranded last June as Finwave Semiconductor (with offices in San Diego, CA and the Bay Area), the early-stage technology company targets 5G communications with its 3DGaN technology, which features a 3D fin gallium nitride transistor (GaN FinFET) structure. Finwave holds numerous GaN FinFET technology patents.

Currently, GaN semiconductors are almost exclusively manufactured outside the USA. Together with ASIC, Finwave aims to stimulate IC manufacturing in the USA. Finwave champions the building of new fabs, as well as the expansion of existing fabs, to boost American semiconductor research, development and production.

Seeking to unlock the promise of 5G, Finwave says that its 3DGaN FinFET technology combines best-in-class power amplification efficiency with high-volume manufacturing to overcome the performance and cost limitations that have together stymied widespread adoption of mmWave. The firm claims that it significantly improves linearity, output power and efficiency in 5G mmWave systems – while greatly reducing costs for carriers. By leveraging high-volume 8”-wafer silicon CMOS fabs for producing 3DGaN chips, Finwave’s devices benefit from both the cost model and scalability of silicon technology. By joining ASIC’s growing membership of companies, universities, startups and nonprofits, Finwave will have access to high-volume fabs and the lithography requirements necessary to bring its technology to volume production.

“Finwave is pleased to join ASIC and its members in the pursuit of strengthening US technology leadership and expanding domestic semiconductor production,” says CEO Bin Lu. “ASIC’s work to create technology hubs – and develop US supply chains and production for our future economic prosperity and national security – aligns perfectly with our goal to provide disruptive 3DGaN FinFET IC technology. Continued development of our technology will help strengthen America’s technology supply chains and leadership, increase production and grow jobs in the US,” he adds.

“Finwave is a proven GaN innovator, and the company’s input and expertise will be key to helping advance US semiconductor R&D leadership,” reckons Douglas Grose, Ph.D., spokesperson for ASIC. “With roots in MIT and the Northeast, Finwave is a shining example of U.S.-based innovation – and an ideal member company to support us in our mission to move manufacturing in this country forward.”

See related items:

Finwave joins MITRE Engenuity’s Semiconductor Alliance

Finwave raises $12.2m in Series A round to bring 3DGaN to volume production

Finwave targeting 5G with 3DGaN FinFET technology

Tags: GaN-on-Si millimeter-wave



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