News: Microelectronics
4 January 2023
Onsemi showcasing EliteSiC family of devices at CES
At the Consumer Electronics Show (CES 2023) in Las Vegas (5-8 January), power semiconductor IC supplier onsemi of Phoenix, AZ, USA is showcasing three new members of its EliteSiC family of silicon carbide (SiC) devices: the 1700V EliteSiC MOSFET and two 1700V avalanche-rated EliteSiC Schottky diodes. The new devices provide reliable, high-efficiency performance for energy infrastructure and industrial drive applications, the firm says.
With the 1700V EliteSiC MOSFET (NTH4L028N170M1), onsemi delivers higher breakdown voltage (BV) SiC solutions, required for high-power industrial applications. The two 1700V avalanche-rated EliteSiC Schottky diodes (NDSH25170A, NDSH10170A) allow designers to achieve stable high-voltage operation at elevated temperatures while offering high efficiency enabled by SiC.
“By providing best-in-class efficiency with reduced power losses, the new 1700V EliteSiC devices reinforce the high standards of superior performance and quality for products in our EliteSiC family as well as further expand the depth and breadth of onsemi’s EliteSiC,” says Simon Keeton, executive VP & general manager of onsemi’s Power Solutions Group. “Together with our end-to-end SiC manufacturing capabilities, onsemi offers the technology and supply assurance to meet the needs of industrial energy infrastructure and industrial drive providers.”
Renewable energy applications are consistently moving to higher voltages with solar systems from 1100V to 1500V DC buses. To support this change, customers require MOSFETs with a higher BV. The new 1700V EliteSiC MOSFET offers a maximum Vgs range of –15V/25V, making it suitable for fast switching applications where gate voltages are increasing to –10V, delivering increased system reliability.
At a test condition of 1200V at 40A, the 1700V EliteSiC MOSFET achieves a gate charge (Qg) of 200nC –claimed to be market-leading compared with equivalent competing devices, which are closer to 300nC. A low Qg is critical to achieving high efficiency in fast-switching, high-power renewable energy applications.
At a BV rating of 1700V, the EliteSiC Schottky diode devices offer improved margin between the maximum reverse voltage (VRRM) and the peak repetitive reverse voltage of the diode. The new devices also provide what is said to be excellent reverse leakage performance with a maximum reverse current (IR) of just 40µA at 25°C and 100µA at 175°C – significantly better than competing devices that are often rated at 100µA at 25°C.
