News: Microelectronics
11 January 2023
ROHM’s fourth-gen SiC MOSFETs to be used in Hitachi Astemo’s EV inverters
Japan’s ROHM has announced the adoption of its new fourth-generation silicon carbide (SiC) MOSFETs and gate driver ICs in electric vehicle (EV) inverters made by Japanese automotive parts manufacturer Hitachi Astemo Ltd.
Especially for EVs, the inverter, which plays a central role in the drive system, needs to be made more efficient to extend the cruising range and reduce the size of the onboard battery, increasing the expectations for SiC power devices.
ROHM says that its latest fourth-generation SiC MOSFETs deliver improved short-circuit withstand time along with what is claimed to be the industry’s lowest ON-resistance, making it possible to extend the cruising range of electric vehicles by reducing power consumption by 6% versus silicon IGBTs (as calculated by the international standard WLTC fuel efficiency test) when installed in the main inverter.
Hitachi Astemo, which has been developing advanced technologies for vehicle motors and inverters for many years, already has a track record in the increasingly popular EV market. However, this is the first time that SiC devices will be adopted for the main inverter circuit to further improve performance. The inverters are scheduled to be supplied to automakers from 2025, starting in Japan and then expanding overseas.
ROHM says that, going forward, as a supplier of SiC power devices, it will continue to strengthen its lineup and provide power solutions that contribute to technical innovation in vehicles by combining peripheral device technologies such as control ICs designed to maximize performance.
ROHM’s fourth-generation SiC MOSFETs to be used in SEMIKRON’s eMPack power modules for EVs
