AES Semigas


5 July 2023

Navitas and Plexim accelerate time-to-market with PLECS models for GeneSiC power semiconductors

Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor of Torrance, CA, USA and Plexim GmbH of Zurich, Switzerland, which provides design and testing tools for the power conversion industry, have partnered to release GeneSiC G3 SiC MOSFET and Gen 5 MPS diode PLECS thermal loss models for highly accurate simulations of complete power electronics systems.

Power designers can simulate power and thermal losses in various soft- and hard-switching applications. Proprietary GeneSiC trench-assisted planar-gate MOSFET technology is claimed to deliver the lowest RDS(ON) at high temperature and the highest efficiency at high speeds, and new MPS diodes with ‘low-knee’ characteristics drive what are claimed to be industry-leading levels of performance, robustness and quality.

“Accurate, empirically based simulation models maximize the chance of first-time-accurate designs, accelerating time-to-market and time-to-revenue,” says Dr Ranbir Singh, Navitas’ executive VP for the GeneSiC business line. “For the power designer, understanding the leading-edge performance of GeneSiC MOSFETs and MPS diodes with detailed device characteristics, plus power, efficiency and thermal analysis, is a critical competitive advantage,” he adds.

“The intuitive and highly efficient PLECS lookup-table based approach to simulating thermal semiconductor losses in complex power electronic circuits is key,” says Kristofer Eberle of Plexim, North America. “Unlike legacy modeling approaches that are not well suited to new wide-bandgap materials, PLECS uses a simplified, but accurate behavioral description to highlight the superior performance of the GeneSiC MOSFETs.”

PLECS models for GeneSiC MOSFETs and MPS diodes are available now via

Tags: GaN Power electronics



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