AES Semigas


5 July 2023

NexGen and General Motors to receive DoE funding for GaN-based electric drive systems

NexGen Power Systems Inc of Santa Clara, CA, USA – which was founded in 2017 to design and manufacture proprietary power conversion devices using patented Vertical GaN (gallium nitride) technologies – says that its collaborative project with General Motors had been awarded funding by the US Department of Energy (DoE) for the development of electric drive systems using its Vertical GaN semiconductors. The joint development project aims to enhance the efficiency, performance and overall sustainability of electric vehicles and intends to focus on power electronics design, motor integration, thermal management and system-level optimization for electric drive systems.

“This collaboration will help us introduce Vertical GaN-based inverter drive systems to the electric vehicle market and will help enable auto makers to improve range, reduce weight, and enhance system reliability,” says NexGen’s CEO Shahin Sharifzadeh.

The announcement builds on NexGen’s announcements in February regarding the availability of engineering samples for its 700V and 1200V semiconductors. The firm’s current-generation 1200V, 1Ohm Vertical GaN e-mode Fin-jFETs have successfully demonstrated >1MHz switching at 1.4kV rated voltage, enabling continued performance, reliability and efficiency improvements in the EV market.

See related items:

NexGen showcasing Vertical GaN-based power systems at PCIM

Tags: Power electronics Vertical GaN transistors


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