AES Semigas


13 July 2023

Toshiba launches SiC 650V Schottky barrier diodes with forward voltage of 1.2V

Japan-based Toshiba Electronic Devices & Storage Corp (TDSC) – which was spun off from Toshiba Corp in 2017 – has launched twelve 650V silicon carbide (SiC) Schottky barrier diodes (SBDs) based on its latest third-generation technology. Now shipping in volume, the new devices are specifically intended for use in efficiency-critical industrial equipment applications including switching power supplies, electric vehicle (EV) charging stations and photovoltaic (PV) inverters.

The devices in the new TRSxxx65H series use new Schottky metal. The third-generation SiC SBDs chip optimizes the junction barrier Schottky (JBS) structure of the second-generation products, lowering the electric field at the Schottky interface and reducing leakage current, hence delivering enhanced efficiency.

Compared with second-generation products, the third-generation devices achieve 17% lower forward voltage (VF) of 1.2V (typical), as well as improved trade-offs between VF and total capacitive charge (QC), which is typically 17nC for the TRS6E65H.

Also improved is the VF and reverse current (IR) ratio, with the TRS6E65H achieving a typical IR value of 1.1µA. All of these improvements reduce power dissipation and contribute to higher levels of efficiency in end-equipment.

Devices in the TRSxxx65H series are capable of forward DC currents (IF(DC)) of up to 12A and square-wave non-repetitive surge currents IFSM up to 640A. Seven of the new devices are housed in TO-220-2L packages while the remaining five are provided in compact and flat DFN8×8 SMD packages.

See related items:

Toshiba develops SiC MOSFET with check-pattern embedded Schottky barrier diodes

Toshiba launches third-generation SiC MOSFETs

Tags: Toshiba SiC Schottky barrier diodes