AES Semigas


13 June 2023

Infineon makes available new-generation 1200V CoolSiC trench MOSFET in TO263-7 package

Infineon Technologies AG of Munich, Germany has made available its new generation of 1200V CoolSiC MOSFETs in TO263-7 packaging for automotive applications. The automotive-graded silicon carbide (SiC) MOSFET generation offers high power density and efficiency, enables bi-directional charging and significantly reduces system cost in on-board charging (OBC) and DC–DC applications.

Infineon’s new-generation 1200V CoolSiC MOSFET in TO263-7 for automotive applications. Picture: Infineon’s new-generation 1200V CoolSiC MOSFET in TO263-7 for automotive applications.

The 1200V CoolSiC family member offers what is claimed to be best-in-class switching performance through 25% lower switching losses compared with the first generation. This improvement in switching behavior enables high-frequency operation, leading to smaller system sizes and increased power density. With a gate–source threshold voltage (VGS(th)) greater than 4V and a very low Crss/Ciss ratio, reliable turn-off at VGS = 0V is achieved without the risk of parasitic turn-ons. This allows for unipolar driving, resulting in reduced system cost and complexity. In addition, the new generation features a low on-resistance (RDS(on)), reducing conductive losses over the whole temperature range of –55°C to 175°C.

The advanced diffusion soldering chip mount technology (.XT technology) is said to significantly improve the package’s thermal capabilities, lowering the SiC MOSFET junction temperature by 25% compared with the first generation.

Moreover, the MOSFET has a creepage distance of 5.89mm, meeting 800V system requirements and reducing coating effort. Infineon is offering a range of RDS(on) options to cater to diverse application demands, including the only 9mΩ type in the TO263-7 package currently on the market.

KOSTAL using CoolSiC MOSFET in OBC platform

Automotive charger system supplier KOSTAL Automobil Elektrik has designed-in Infineon’s latest CoolSiC MOSFET in its next-generation OBC platform for Chinese OEMs. With its standard platform approach, safe, reliable and highly efficient products are delivered worldwide for various OEM requirements and global regulations.

“As key component for our future-generation OBC platform, Infineon’s new 1200V CoolSiC trench MOSFET features high voltage rating and qualified robustness,” comments Shen Jianyu, VP technical executive manager at KOSTAL ASIA. “These benefits help us in to create a compatible design to manage our state-of-art technical solutions, cost optimization and massive market delivery,” he adds.

See related items:

Infineon extends CoolSiC M1H technology portfolio with 1200V SiC MOSFETs

Tags: Infineon SiC MOSFET