AES Semigas


12 June 2023

WIN releases 50V RF GaN technology for high-power MMICs

WIN Semiconductors Corp of Taoyuan City, Taiwan – which provides pure-play gallium arsenide (GaAs) and gallium nitride (GaN) wafer foundry services for the wireless, infrastructure, and networking markets – has announced the commercial release of NP25-20, a 50V 0.25µm-gate RF GaN platform, targeting high-performance front-end applications including radio access networks, satellite communications, electronic warfare and radar systems. The NP25-20 technology supports full monolithic microwave integrated circuits (MMICs) enabling customers to design compact, linear or saturated high-power amplifiers, rugged low-noise amplifiers and single-chip front-end solutions through 18GHz.

The NP25-20 gallium nitride technology employs a source-coupled field plate for improved breakdown voltage and operates at a drain bias of 50V. The technology is fabricated on 100mm silicon carbide (SiC) substrates with through-wafer vias for low-inductance grounding. At X-band, NP25-20 demonstrates what is claimed to be excellent transmit and receive performance with saturated output power of 10W/mm,18dB linear gain and 60% power-added efficiency (PAE). When biased for noise performance at 10GHz, NP25-20 provides minimum noise figure of 0.8dB with 12dB associated gain. The combination of power density and superb noise figure from NP25-20 enables high-performance single-chip front ends without sacrificing transmit power or receiver sensitivity, claims WIN.

“The performance versatility of NP25-20 is unique for RF gallium nitride technology. A GaN MMIC platform with 10W/mm output power alone is an achievement,” says David Danzilio, senior VP at WIN. “Combining surprising noise performance with high-power switching in the same device creates a new toolset for customers to commercialize market-leading products for a wide range of applications.”

WIN is showcasing its compound semiconductor RF and mm-Wave solutions in booth #235 at the 2023 International Microwave Symposium at the San Diego Convention Center, San Diego, CA, USA (11–16 June).

See related items:

WIN enhances 0.25µm GaN power process

Tags: WIN Semiconductors



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