AES Semigas


6 March 2023

CGD presents GaN-based power electronics at APEC

At the Applied Power Electronics Conference (APEC 2023) in Orlando, FL, USA (19–23 March), Cambridge GaN Devices Ltd (CGD) — which was spun out of the University of Cambridge Department of Engineering’s Electrical Power and Energy Conversion group in 2016 by CEO Dr Giorgia Longobardi and professor Florin Udrea and designs, develops and commercializes power transistors and ICs that use GaN-on-silicon substrates — is presenting several papers covering strategic views on sustainability and deep-dive technology analysis. Executives from the firm are chairing two sessions, and on booth 305 CGD is presenting demos using proven reference designs and evaluation boards plus new and established GaN eco-system partnerships.

“The power electronics community and the wider world are now accepting that gallium nitride technology can play a huge role in enabling sustainable electronics solutions that are more efficient, have high performance and are more compact,” says Longobardi. “At important international events such as APEC, we have an opportunity to explain and demonstrate our technology to an audience drawn from many different industries and markets.”

At APEC, CGD is presenting four papers:
21 March

  • 11.05–11.30am — ‘An Overview of GaN Dynamic Rds(ON) and Quantifying Performance Benefits of 0V GOFF in Real Applications’ by director of applications engineering Peter Comiskey;
  • 11.05–11.30am — ‘Meeting Carbon Goals with GaN’ by CEO Giorgia Longobardi;
  • 1.30–2pm — Exhibitor Seminar: ‘ICeGaN 650V Power GaN ICs bring efficiency, robustness and reliability for high power applications to the next level’ by CEO Giorgia Longobardi.

23 March

  • 3–3.25pm — ‘A GaN HEMT with Exceptional Gate Overvoltage Robustness’ by Virginia Tech University and director of innovation & research Daniel Popa.

Also on 23 March, Peter DiMaso, VP business development Americas, is chairing session IS19 on WBG applications at 8.30am (EST), and Peter Comiskey, director of applications engineering, is chairing session IS25 on Wide-Bandgap (WBG) devices at 1.45pm (EST).

In booth 305, CGD is presenting a range of demos designed to showcase what is claimed to be the industry’s first easy-to-use and scalable 650V GaN HEMT family. ICeGaN H1 single-chip eMode HEMTs can be driven like a MOSFET, without the need for special gate drivers, complex and lossy driving circuits, negative voltage supply requirements or additional clamping components. The displays include half-bridge, 350W LLC, 350W PFC, 65W QRF and 3kW LLC evaluation circuits, plus a thermal demo and an example of a 3kV photovoltaic solar inverter developed using GaN in partnership with Neways.

See related items:

CGD and IFP Energies nouvelles sign automotive inverter development deal

CGD and Neways co-developing GaN-based solar inverters

CGD’s ICeGaN HEMTs available in high volume

Tags: GaN power devices



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