AES Semigas


15 March 2023

SHARGE chooses EPC’s GaN FETs for 67W USB PD charger

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications – has teamed up with China-based SHARGE Technology to design a 67W USB PD charger with a power display screen. The Retro 67 fast charger uses the EPC2218 100V GaN FET, which can deliver 231A pulsed current in a footprint of just 3.5mm x 1.95mm, offering designers a significantly smaller, more efficient device than silicon MOSFET for USB PD fast chargers.

EPC2218 provides SHARGE’s All-GaN fast charger with what is said to be higher efficiency, state-of-the-art power density and lower system cost.

The SHARGE Retro 67 supports 67W of power output, providing full-speed charging for the latest high-power laptops. The charger has three USB-C ports, to support multiple device charging.

The Retro 67 uses the EPC2218 to achieve the most efficient power conversion, reducing product size and enabling a PCBA power density of up to 1.39W/cm3 and an overall power density of 0.85W/cm3 with 90V AC input. The overall conversion efficiency of the SHARGE Retro 67 fast charger is 92.16% with 230V AC input.

See related items:

BRC Solar selects EPC2218 100V eGaN FETs for solar power optimizer

EPC launches latest 100V eGaN FET family

Tags: EPC E-mode GaN FETs


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