AES Semigas


14 March 2023

Mitsubishi Electric to build new 8-inch SiC fab to boost power semi production

Tokyo-based Mitsubishi Electric Corp is to double the investment plan (that it announced in 2021) from 130bn yen to about 260bn yen in the five-year period to March 2026, mainly for constructing a new wafer plant to increase production of silicon carbide (SiC) power semiconductors.

Under the plan, Mitsubishi Electric expects to respond to the rapidly increasing demand for SiC power semiconductors for electric vehicles (EVs) as well as expanding markets for new applications that require, for example, low energy loss, high-temperature operation or high-speed switching.

About 100bn yen of the 130bn yen increased investment will be used to construct a new 8-inch SiC wafer plant and to enhance related production facilities. The new factory, which will incorporate an owned facility in the Shisui area of Kumamoto Prefecture, will produce large-diameter 8-inch SiC wafers. The firm will also enhance its production facilities for 6-inch SiC wafers to meet the growing demand in this sector.

In addition, Mitsubishi Electric will newly invest about 10bn yen in a new factory that will consolidate existing operations (currently dispersed throughout the Fukuoka area) for the assembly and inspection of power semiconductors. The integration of design, development and production technology verification is expected to greatly enhance the company’s development capabilities and facilitate timely mass production in response to market demand.

The remaining 20bn yen of the new investment will be targeted at equipment enhancements, environmental arrangements and related operations.

Tags: Mitsubishi Electric


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