AES Semigas


16 March 2023

Richardson to distribute Navitas’ SiC power semiconductors in Americas

Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor of Torrance, CA, USA has announced a distribution agreement with Richardson Electronics Ltd of LaFox, IL, USA covering SiC power semiconductors for the Americas.

Richardson will focus on Navitas’ GeneSiC power MOSFETs and MPS diodes that are rated at 650V–6.5kV. Patented trench-assisted planar-gate technology delivers what is claimed to be the lowest on-resistance RDS(ON) at high temperature and the lowest energy losses at high speeds.

“Navitas recognizes Richardson’s long-term partnerships, technical knowledge and robust customer support to American customers who demand high end power semiconductor products,” comments Dr Ranbir Singh, executive VP at Navitas. “GeneSiC MOSFETs and MPS diodes are a perfect fit for Richardson’s market strongholds of renewable energy, industrial, medical, transportation and energy storage,” he adds.

“For years Richardson has developed an excellent portfolio of power management components and engineered solutions,” says Greg Peloquin, executive VP & general manager Power Microwave and Green Energy Solutions Group. “Adding Navitas as a key technology partner is an excellent addition to supporting our customers’ needs,” he adds. “Their products are world class and provide disruptive technology to our customers looking for superb hard-switching components with excellent lead-times.”

See related items:

Avnet Silica to expand EMEA market for Navitas’ GaNFast power ICs with GaNSense

Tags: Power electronics GeneSiC