AES Semigas


6 March 2023

Transphorm presenting at APEC 2023

Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC- and AEC-Q101-qualified gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion — says that it is highlighting its broad spectrum (low- to high-power) GaN power conversion solutions in booth 853 at the 38th annual Applied Power Electronics Conference (APEC 2023) in Orlando, FL, USA (19–23 March), where the firm is a Silver Partner.

Specifically, the firm is showcasing the recently announced WT7162RHUG24A device, the new SuperGaN system-in-package (SiP) developed with Weltrend Semiconductor Inc of Hsinchu Science Park, Taiwan designed to round out its FET portfolio. Transphorm says that this device will provide another opportunity to easily and quickly design in its high-performance GaN platform while reducing bill-of-materials (BOM) component count and overall system cost.

Transphorm is also showcasing new in-production products from top-tier global brand customers representing various markets. APEC attendees will also learn about drop-in and replacement solutions for existing GaN power applications.

One core platform, spanning the power spectrum

Transphorm claims to support the largest range of power conversion requirements (45W to 10+kW) across the widest range of power applications. Its FET portfolio includes 650V and 900V devices, with 1200V devices in development. Since they are JEDEC and AEC-Q101 qualified, they are optimal solutions for power adapters and computer power supply units (PSUs) through to broad industrial uninterruptible power supplies (UPSs) and electric vehicle (EV) mobility systems. The mix of customer products being displayed at APEC underscores the broad usability of the SuperGaN platform, says Transphorm.

Speaking engagements

At APEC, Transphorm experts are delivering the following presentations:

  • High-Power 650 V and 1200 V GaN Devices for EV Applications’ by Davide Bisi, member of technical staff, Office of the CTO — Industry Session (IS03), 21 March (8:30am);
  • 900V GaN – Designing for Reliability’ by VP of engineering Dr Likun Shen — Industry Session (IS12), 22 March (9:20am).

See related items:

Transphorm GaN FET designed into HP’s 65W USB-C PD/PPS power adapter

Tags: Transphorm GaN-on-Si GaN HEMT